• DocumentCode
    2760481
  • Title

    NBTI degradation with optimized ID-VG sweep for wafer fabrication monitoring

  • Author

    Soon, F.Y. ; Soin, N.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Malaya, Kuala Lumpur, Malaysia
  • fYear
    2011
  • fDate
    19-20 July 2011
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    NBTI degradation mechanism is studied for 0.18μm pMOSFETs. Degradation on saturation and linear mode of operations are investigated respectively. To address the controlled delay in between stress cycles which account for the recovery effect, an optimized ID-VG sweep is devised in this work. The optimized ID-VG sweep is found to be able to reduce the recovery effect and it is easily to be implemented in typical DC parametric production tester in wafer fabrication manufacturing environment.
  • Keywords
    MOSFET; semiconductor device manufacture; test equipment; DC parametric production tester; NBTI degradation mechanism; controlled delay; linear mode; negative bias temperature instability; optimized ID-VG sweep; pMOSFET; saturation mode; size 0.18 mum; wafer fabrication manufacturing environment; wafer fabrication monitoring; Degradation; Delay; Logic gates; MOSFETs; Monitoring; Reliability; Stress; Measurement Delay; NBTI; Wafer Fabrication Monitoring; pMOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4577-0145-0
  • Type

    conf

  • DOI
    10.1109/ASQED.2011.6111759
  • Filename
    6111759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2760481