A modeling technique for internally matched bipolar microwave power transistor networks

Author

Brody, David ; Branner, G.R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

Volume

2

fYear

1994

fDate

3-5 Aug 1994

Firstpage

1224

Abstract

The use of power amplifiers in RF and microwave circuits and their models as used In CAE design software is a topic of considerable interest. In this paper we present a nonlinear network model for an internally matched bipolar “power” transistor (IMBIP). The IMBIP is divided into two networks, modeled separately and then combined to obtain a complete model. Linear and nonlinear comparisons between measured and modeled data are presented

Keywords

impedance matching; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; nonlinear network analysis; power bipolar transistors; bipolar microwave power transistor networks; internally matched networks; modeling technique; nonlinear network model; Circuits; Computer aided engineering; Electromagnetic heating; Inductance; MOS capacitors; Microwave amplifiers; Microwave circuits; Microwave theory and techniques; Microwave transistors; Packaging; Power amplifiers; Power generation; Power measurement; Power system modeling; Power transistors; Radio frequency; Radiofrequency amplifiers; Software design;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on

Conference_Location

Lafayette, LA

Print_ISBN

0-7803-2428-5

Type

conf

DOI

10.1109/MWSCAS.1994.519029

Filename

519029