DocumentCode
2760610
Title
Efficient high-speed CMOS design by layout based schematic method
Author
Mu, Fenghao ; Svensson, Christer
Author_Institution
IFM, Linkoping Univ., Sweden
Volume
1
fYear
1998
fDate
25-27 Aug 1998
Firstpage
337
Abstract
As the diffusion area and the wire capacitance worsen the circuit performance in very high speed CMOS design, the results between schematic and layout differ from each other because of missing parasitic components in the schematic. We address a layout based schematic (LBS) method for high speed CMOS cell design. In our method, we introduce different types of MOS transistors and a wire capacitance estimation method, based on layout knowledge. The simulation results at very high speed show that the difference between LBS and real circuit layout is much smaller, less than 3 percent in rise time, compared to the difference in the worst case up to 65 percent in original schematic. The result of LBS is reliable and easy to be optimized during the schematic procedure. It will reduce the design time and cost in high speed circuit design. We also believe that the LBS is more convenient to be translated into the real layout than the original schematic
Keywords
CMOS integrated circuits; MOSFET; circuit layout CAD; circuit optimisation; digital simulation; CAD; MOS transistors; circuit layout; circuit performance; diffusion area; high-speed CMOS design; layout based schematic method; optimization; simulation; wire capacitance; Circuit optimization; Circuit simulation; Circuit synthesis; Cost function; Design optimization; Diodes; MOSFETs; Parasitic capacitance; Very large scale integration; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Euromicro Conference, 1998. Proceedings. 24th
Conference_Location
Vasteras
ISSN
1089-6503
Print_ISBN
0-8186-8646-4
Type
conf
DOI
10.1109/EURMIC.1998.711823
Filename
711823
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