Title :
Novel optoelectronic materials: GaInNAs and Ga(In)NP
Author :
Tu, C.W. ; Xin, H.P. ; Sopanen, M. ; Welty, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We show that room-temperature light emission near 1.55 μm can be achieved from GaAs-based heterostructures, as demonstrated by GaInNAs quantum dots. In addition, incorporation of N in GaNxP1-x alloys (x⩾0.43%) leads to a direct bandgap behavior of GaNP. The superior properties of direct bandgap and lattice-matching to Si make GaN0.02P0.98 a very promising light-emitting material for potential integration with Si electronics technology
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum dots; 1.55 micron; GaAs heterostructure; GaInNAs; GaInNAs quantum dot; GaInNP; GaNP; III-V compound semiconductor; direct bandgap; lattice matching; light emitting diode; optoelectronic material; Absorption; Epitaxial growth; Gallium arsenide; Light emitting diodes; Nitrogen; Photonic band gap; Quantum well lasers; Semiconductor materials; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894088
