Series anti-parallel diode linearizer for class-B power amplifiers with a gain expansion

Author

Yamauchi, Kazuhisa ; Noto, Hifumi ; Ishizaka, Satoru ; Hamamatsu, Yoshihiro ; Nakayama, Masatoshi ; Isota, Yoji

Author_Institution

MITSUBISHI Electr. Corp., Kanagawa

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

883

Lastpage

886

Abstract

A series anti-parallel diode linearizer (SAPDL) for class-B power amplifiers with a gain expansion has been proposed. SAPDL has the characteristic whose gain is decreased in the middle power region and is increased in the saturated region. In this paper, the operation principle of SAPDL is made clear. SAPDL is applied for a class-B UHF-band power amplifier with a gain expansion. An improvement of adjacent channel leakage power ratio (ACPR) of 4 dB and power added efficiency (PAE) of 6 % has been achieved for the OFDM signal of the 6 MHz bandwidth.

Keywords

OFDM modulation; UHF power amplifiers; diodes; OFDM signal; adjacent channel leakage power ratio; bandwidth 6 MHz; class-B UHF-band power amplifier; gain expansion; power added efficiency; series anti-parallel diode linearizer; Bandwidth; Equivalent circuits; High power amplifiers; Microwave amplifiers; Mobile communication; OFDM; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Schottky diodes; communications; diode; distortion; linearizer; nonlinear; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429554

Filename

4429554