DocumentCode
2760760
Title
MOCVD growth long wavelength InGaAs QW (QDs) and GaInNAs QW on the GaAs substrate by using of TBAs and uDMHy sources
Author
Wang, Zhi-jie ; Chua, Soo-jin
Author_Institution
Inst. of Mater. Res. Eng., Singapore
Volume
2
fYear
2000
fDate
2000
Firstpage
792
Abstract
High quality InGaAs QW (QD) and InGaAsN with RTPL emission around 1.2 μm-1.3 μm have been grown on GaAs substrate by MOCVD using of tertiarylbutyl (TBAs) and 1,1-dimethylhydraxine (uDMHy). The material growth and characteristics are investigated
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared spectra; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; 1,1-dimethylhydraxine; 1.2 to 1.3 mum; GaAs substrate; GaInNAs QW; InGaAs; InGaAs QW; InGaAs quantum dots; InGaAsN; MOCVD growth; RTPL emission; TBA; long wavelength; material growth; photoluminescence; tertiarylbutyl; uDMHy sources; Buffer layers; Energy resolution; Gallium arsenide; Hydrogen; Indium gallium arsenide; Indium phosphide; Large Hadron Collider; MOCVD; Optical materials; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.894092
Filename
894092
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