DocumentCode
2761171
Title
Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection
Author
Kanki, Tsuyoshi ; Ikeda, Junya ; Kobayashi, Yasushi ; Suda, Shoichi ; Nakata, Yoshihiro ; Nakamura, Tomoji
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.
Keywords
copper; diffusion; halogens; metallisation; semiconductor device reliability; wiring; Cu; HAST environment; chip interconnection; diffusion; halogen ions; high reliable wiring; metal cap barriers; reliability; Corrosion; Films; Ions; Reliability; Resins; Wires; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251635
Filename
6251635
Link To Document