Electrical performances and quality investigations of integrated bonded structures and TSVs for 3D interconnects

Author

Chen, K.N. ; Chang, Y.J. ; Ko, C.T. ; Hsu, S.Y. ; Chen, H.Y. ; Hsiao, C. ; Yu, T.H. ; Chen, Y.H. ; Lo, W.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

1

Abstract

The integration of TSVs and bonded structures is an important topic in 3D integration. In this study, fine Cu TSVs and various bonded structures, including Cu/Sn micro-bumps, Cu bond pads, and Cu alloy structures, are integrated and demonstrated. Electrical performances, morphology investigations, and reliability investigations of TSVs, bonded bumps/pads, and the integrated structures are studied. For a wellfabricated 3D interconnect structure, excellent electrical performance and mechanical strength with stable reliability behavior can be achieved.

Keywords

copper; integrated circuit interconnections; semiconductor device reliability; three-dimensional integrated circuits; tin; 3D integration; 3D interconnects; Cu-Sn; TSV; electrical performance; integrated bonded structure; mechanical strength; morphology investigations; quality investigation; reliability investigations; Educational institutions; Electronic mail; Laboratories; Morphology; Reliability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251636

Filename

6251636