GaAsSb-based alloys for long-wavelength lasers

Author

Anan, T. ; Nishi, Kenichi ; Yamada, Mitsuki ; Kurihara, Kaori ; Tokutome, Keiichi ; Kamei, Akio ; Sugou, Shigeo

Author_Institution

Opt. Interconnection, NEC Corp., Ibaraki, Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

848

Abstract

We will review the growth, structural, and optical properties of GaAsSb QWs and the material gain improvement of lasers using modulation doping in the active region and the state-of-the-art device performance of GaAsSb VCSELs. We grew GaAsSb QWs with GaAs barriers on n-GaAs (100) substrates by using gas-source molecular beam epitaxy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE)

Keywords

III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor doping; surface emitting lasers; vapour phase epitaxial growth; GaAs; GaAs barriers; GaAsSb; GaAsSb QWs; GaAsSb VCSELs; GaAsSb-based alloys; MBE; MOVPE; active region; gas-source molecular beam epitaxy; long-wavelength lasers; material gain improvement; metal-organic vapor phase epitaxy; modulation doping; n-GaAs (100) substrates; optical properties; review; state-of-the-art device performance; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gas lasers; Optical devices; Optical materials; Optical modulation; Performance gain; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894120

Filename

894120