Title :
Robust low-k film with sub-nm pores and high carbon content for highly reliable Cu/low-k BEOL modules
Author :
Inoue, N. ; Tagami, M. ; Ito, F. ; Yamamoto, H. ; Kawahara, J. ; Soda, E. ; Shobha, H. ; Gates, S. ; Cohen, S. ; Liniger, E. ; Madan, A. ; Protzman, J. ; Ryan, E.T. ; Ryan, V. ; Ueki, M. ; Hayashi, Y. ; Spooner, T.
Author_Institution :
Renesas Electron., Albany, NY, USA
Abstract :
Critical parameters of low-k films were defined to keep capacitance benefit and TDDB reliability in the scaling BEOL module, according to various analyses. In order to meet the criteria of high carbon content, low porosity with small pores, and high adhesion strength with less adhesion layer, precursor and process were designed for the SiOCH with k~2.5. The benefits in integration and reliability from the newly developed robust low-k film were verified through the trench-first integration of 80 nm-pitch BEOL modules.
Keywords :
adhesion; carbon; copper; low-k dielectric thin films; semiconductor device reliability; Cu; TDDB reliability; adhesion layer; high carbon content; high reliable Cu-low-k BEOL module; precursor; robust low-k film; size 80 nm; sub nm pores; trench-first integration; Adhesives; Capacitance; Carbon; Films; Robustness;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251641
