DocumentCode :
2761337
Title :
A 2.14 GHz class-E LDMOS power amplifier
Author :
Lee, Yong-Sub ; Jeon, Kye-Ik ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
fYear :
2006
fDate :
12-15 Dec. 2006
Firstpage :
1015
Lastpage :
1018
Abstract :
This paper describes a high efficiency class-E power amplifier using the experimental- based design method. The class-E power amplifier is designed and implemented using an LDMOSFET with a 10 W peak envelope power (PEP) at a band of 2.14 GHz. To suppress harmonic powers and reduce losses, the output matching network using transmission lines is used. From measured results, the drain efficiency of 65.2 % with a power gain of 13.8 dB is achieved at a Pout of 39.84 dBm. Also, the 2nd - and 3rd - harmonic power levels are reduced below -48 dBc.
Keywords :
harmonics suppression; power MOSFET; power amplifiers; LDMOSFET; bandwidth 2.14 GHz; class-E LDMOS power amplifier; gain 13.8 dB; harmonic power suppression; loss reduction; peak envelope power; power 10 W; transmission line; Design methodology; Gain measurement; High power amplifiers; Impedance matching; Power amplifiers; Power measurement; Power system harmonics; Power transmission lines; Propagation losses; Transmission line measurements; Class-E power amplifier; LDMOSFET; drain efficiency; harmonic; transmission line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
Type :
conf
DOI :
10.1109/APMC.2006.4429582
Filename :
4429582
Link To Document :
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