Improved DC and RF performance of high power AlGaN/GaN HEMTs with a novel inner field-plate

Author

Lee, Kiwon ; Ko, Kwangui ; Lee, Sungsik ; Yang, Kyounghoon

Author_Institution

Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1019

Lastpage

1022

Abstract

An AlGaN/GaN high electron mobility transistor (HEMT) device based on a novel inner field- plate (IFP) structure is proposed and fabricated. At an optimum bias condition of the inner field-plate (V_IFP), the gate leakage current of the device has been reduced by more than 15%. In addition, the microwave performance has been found to be improved considerably with increased cut-off frequencies of f_T = 6.9 GHz and f_MAX = 14.4 GHz at a gate length of 1 mum. The IFP-HEMT biased at the inner field-plate voltage of V_IFP=8 V and V_DS=15 V demonstrated an increased maximum output power of 16.4 dBm at 2 GHz compared to the maximum output power of 15.5 dBm for the reference case in which the inner plate is connected to the gate electrode (V_IFP=V_GS).

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; microwave power transistors; power HEMT; AlGaN-GaN; gate leakage current; high electron mobility transistor device; high power HEMT; inner field-plate; microwave power HEMT; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; HEMTs; Leakage current; MODFETs; Microwave devices; Power generation; Radio frequency; Voltage; high electron mobility transistor (HEMT); inner field-plate (IFP); leakage current; microwave power HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429583

Filename

4429583