DocumentCode
2761489
Title
Engineering the extendibility of Cu/low-k BEOL technology
Author
Edelstein, Daniel C.
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
1
Abstract
Copper dual damascene BEOL technology has been in production now for 14 years and 7 CMOS generations, since it shipped in its first chips in late 1997, and was first ramped to high volume production in mid-1998. Besides benefits in performance and manufacturability, perhaps the main benefit has been to keep the door open for continued Moore´s Law scaling of on-chip wiring, where Al(Cu)-based wires could not have extended - either for fine line current densities and reliability, or multilevel hierarchical scaling for large/thick lines to help circumvent the RC scaling crisis.
Keywords
CMOS integrated circuits; copper; low-k dielectric thin films; CMOS generations; Cu; Moore Law scaling; RC scaling crisis; high volume production; large-thick lines; low-k BEOL technology; manufacturability; multilevel hierarchical scaling; on-chip wiring; reliability; Abstracts; CMOS integrated circuits; Electromigration; Metals; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251651
Filename
6251651
Link To Document