• DocumentCode
    2761489
  • Title

    Engineering the extendibility of Cu/low-k BEOL technology

  • Author

    Edelstein, Daniel C.

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Copper dual damascene BEOL technology has been in production now for 14 years and 7 CMOS generations, since it shipped in its first chips in late 1997, and was first ramped to high volume production in mid-1998. Besides benefits in performance and manufacturability, perhaps the main benefit has been to keep the door open for continued Moore´s Law scaling of on-chip wiring, where Al(Cu)-based wires could not have extended - either for fine line current densities and reliability, or multilevel hierarchical scaling for large/thick lines to help circumvent the RC scaling crisis.
  • Keywords
    CMOS integrated circuits; copper; low-k dielectric thin films; CMOS generations; Cu; Moore Law scaling; RC scaling crisis; high volume production; large-thick lines; low-k BEOL technology; manufacturability; multilevel hierarchical scaling; on-chip wiring; reliability; Abstracts; CMOS integrated circuits; Electromigration; Metals; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251651
  • Filename
    6251651