Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization

Author

Van der Veen, Marleen H. ; Vereecke, Bart ; Sugiura, Masahito ; Kashiwagi, Yusaku ; Ke, Xiaoxing ; Cott, Daire J. ; Vanpaemel, Johannes K M ; Vereecken, Philippe M. ; De Gendt, Stefan ; Huyghebaert, Cedric ; Tökei, Zsolt

Author_Institution

imec, Leuven, Belgium

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

This paper discusses the electrical and structural characterization of 150 nm diameter contacts filled with carbon nanotubes (CNTs) and a Cu damascene top metal. We present the first images of CNTs in direct contact with the top metal. A CNT tip clean before metallization reduced the single CNT contact hole resistance from 4.8 kΩ down to 2.8 kΩ (aspect ratio 2.4). The first basic electrical breakdown experiments with Kelvins resulted in high breakdown currents of 5-13 MA/cm².

Keywords

carbon nanotubes; copper; electric breakdown; electrical contacts; semiconductor device metallisation; CNT contacts; Cu; Kelvins; carbon nanotubes; damascene top metallization; electrical breakdown; electrical contacts; resistance 2.8 kohm; resistance 4.8 kohm; size 150 nm; structural characterization; Contacts; Electric breakdown; Kelvin; Metallization; Resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251670

Filename

6251670