DocumentCode
2761837
Title
Multi-layer graphene wire grown by annealing sputtered amorphous carbon
Author
Sato, Motonobu ; Takahashi, Makoto ; Nakano, Haruhisa ; Murakami, Tomo ; Kawabata, Akio ; Nihei, Mizuhisa ; Yokoyama, Naoki
Author_Institution
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
We have fabricated multi-layer graphene directly on SiO2 by annealing sputtered amorphous carbon with a Co catalyst without use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure, aligned to the Co (111) surface. An MLG wire can sustain a high current density of 107 A/cm2 which is over one order of magnitude higher than that of a Cu wire.
Keywords
annealing; catalysts; current density; graphene; silicon compounds; sputter deposition; wires (electric); C-SiO2; Co; MLG wire; catalyst; complicated transfer process; current density; epitaxial structure; graphene sheet; multilayer graphene wire; sputtered annealing; structural analysis; Annealing; Carbon; Conductivity; Current density; Films; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251671
Filename
6251671
Link To Document