An Analytic Solution of Channel Potential and Drain Current for an Undoped Symmetric DG MOSFET Using SiO2 and High K Gate Dielectrics

In this work, we have presented a new analytical potential and current model for an undoped symmetric double- gate (DG) MOSFET which is valid from low to high drain-source voltages. The models are derived from an analytical solution of 2-D Poisson´s equation. From the analytic solutions, explicit expressions for potential, electric field, mobile charge density and current have been derived. Simulations are done with the gate material SiO₂ (k = 3.9) and high k dielectric material HfO₂ (k = 22). Our results are in close agreement to the numeric device simulator ATLAS as well as other published and experimental results.