Device modeling of a micromorph tandem solar cell using AMPS-1D

Author

Huang, J.Y. ; Hsu, C.W. ; Shieh, Jia-Min ; Yu, Peichen

Author_Institution

Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

20-25 June 2010

Abstract

This work first theoretically optimize the amorphous (a-Si:H) and the microcrystalline (μc-Si:H) devices characteristics, and then perform studies for micromorph tandem solar cells. The studies calculated by AMPS-1D show that the TCO work function has obvious influence on the open-circuit voltage. Moreover, the power conversion efficiency of an a-Si:H cell is optimized by changing the absorber´s layer thickness and mobility gap. Furthermore, a critical doping concentration of μc-Si:H films limiting the barrier height of a grain boundary (GB) is observed. After optimizing sub cell mutually, we combine the individual junctions to construct a micromorph cell which has an efficiency of 9.24%.

Keywords

amorphous semiconductors; doping profiles; grain boundaries; silicon; solar cells; AMPS-1D; Si:H; TCO work function; absorber layer thickness; amorphous device characteristics; doping concentration; grain boundary; microcrystalline device characteristics; micromorph tandem solar cell; mobility gap; open-circuit voltage; power conversion efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5615842

Filename

5615842