Improved high-Q microwave dielectric resonator using B2O3 doped Nd(Co1/2Ti1/2)O3 ceramics

Author

Tseng, Ching-Fang ; Huang, Cheng-Liang

Author_Institution

Nat. Cheng Kung Univ., Tainan

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1256

Lastpage

1259

Abstract

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ ceramics prepared by conventional solid-state route have been studied. It is found that low-level doping of B₂O₃ (up to 0.75 wt%) can significantly improve the density and dielectric properties of Nd(Co_1/2Ti_1/2)O₃ ceramics. At 1320degC/4 h, Nd(Co_1/2Ti_1/2)O₃ ceramics with 0.75 wt% B₂O₃ addition possesses a dielectric constant (epsiv_r) of 27.2, a Qtimesf value of 153000 GHz (at 9 GHz) and a temperature coefficient of resonant frequency (tau_f) of 0 ppm/degC. The B₂O₃-doped Nd(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.

Keywords

dielectric resonators; microwave devices; B₂O₃; dielectric constant; frequency 153000 GHz; frequency 9 GHz; improved high-Q microwave dielectric resonator; low-level doping; microwave devices; resonant frequency; solid-state route; temperature coefficient; Ceramics; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Microwave devices; Powders; Q factor; Resonant frequency; Temperature; Na(Co1/2Ti1/2)O3 ceramics; Qxf value; microwave dielectric properties; resonators; temperature coefficient of resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429634

Filename

4429634