Title :
Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells
Author :
Maximenko, S.I. ; Messenger, S.R. ; Cress, C. ; Gonzalez, M. ; Freitas, J.A., Jr. ; Walters, Robert J.
Author_Institution :
Global Defense Technol. & Syst., Inc., Crofton, MD, USA
Abstract :
We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.
Keywords :
EBIC; III-V semiconductors; cathodoluminescence; elemental semiconductors; gallium arsenide; germanium; indium compounds; radiation effects; scanning electron microscopy; semiconductor junctions; solar cells; CL-EBIC-SEM technique; InGaP2-GaAs-Ge; cathodoluminescence imaging; cathodoluminescence spectroscopy; electron beam induced current mode; illuminated current-voltage characteristic; irradiated multijunction solar cell; irradiation induced defect characterization; monolithic triple junction structure; optoelectronic property; quantum efficiency characteristic; scanning electron microscopy; subcell; triple junction solar cell;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5615869
