Title :
A subthreshold current model for short channel InP MESFETs
Author :
Badr, Khamis H. ; El-Banna, M.
Author_Institution :
Air Defense Coll., Alexandria, Egypt
Abstract :
Modeling the subthreshold current of MESFETs becomes very important to VLSI designers. An analytical two-dimensional model for the subthreshold current in InP MESFETs is presented. The model takes into account the short-channel effects on the barrier between the source and the drain, which may cause the device to conduct while it is believed to be cut-off. Obtained results are compared to those published for similar GaAs MESFETs. Comments and discussions are provided
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric current; indium compounds; semiconductor device models; InP; VLSI design; analytical 2D model; short channel MESFETs; subthreshold current model; two-dimensional model; Analytical models; Design engineering; Educational institutions; Electrostatics; Gallium arsenide; Indium phosphide; MESFETs; Poisson equations; Subthreshold current; Threshold voltage; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
DOI :
10.1109/MWSCAS.1994.519041
