DocumentCode
2762533
Title
A subthreshold current model for short channel InP MESFETs
Author
Badr, Khamis H. ; El-Banna, M.
Author_Institution
Air Defense Coll., Alexandria, Egypt
Volume
2
fYear
1994
fDate
3-5 Aug 1994
Firstpage
1273
Abstract
Modeling the subthreshold current of MESFETs becomes very important to VLSI designers. An analytical two-dimensional model for the subthreshold current in InP MESFETs is presented. The model takes into account the short-channel effects on the barrier between the source and the drain, which may cause the device to conduct while it is believed to be cut-off. Obtained results are compared to those published for similar GaAs MESFETs. Comments and discussions are provided
Keywords
III-V semiconductors; Schottky gate field effect transistors; electric current; indium compounds; semiconductor device models; InP; VLSI design; analytical 2D model; short channel MESFETs; subthreshold current model; two-dimensional model; Analytical models; Design engineering; Educational institutions; Electrostatics; Gallium arsenide; Indium phosphide; MESFETs; Poisson equations; Subthreshold current; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location
Lafayette, LA
Print_ISBN
0-7803-2428-5
Type
conf
DOI
10.1109/MWSCAS.1994.519041
Filename
519041
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