• DocumentCode
    2762614
  • Title

    Reducing device yield fallout at wafer level test with electrohydrodynamic (EHD) cleaning

  • Author

    Broz, Jerry J. ; Andersen, James C. ; Rincon, Reynaldo M.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    477
  • Lastpage
    484
  • Abstract
    Unstable contact resistance (CRES) during wafer test can significantly affect device yield, the need for reprobe, and equipment uptime. Abrasive cleaning during off-line probe card repair and maintenance is effective for reducing CRES and removing surface contaminants from probe tips. This type of cleaning, however, shortens probe card life and can compromise probe card planarity and alignment. Off-line electrohydrodynamic (EHD) cleaning uses charged molecular microclusters to reduce CRES without damaging probe card materials or misaligning the probe tips. An engineering evaluation was performed using two groups of probe cards that were regularly cleaned off-line with a tungsten carbide abrasive plate and the EHD cleaning tool respectively. For the evaluation, a very high volume device sensitive to CRES stability and variation was identified and probe card performance was monitored for several weeks across multiple lots. Probe card performance after abrasive cleaning did not deviate significantly from the historical median. However, after EHD cleaning an increase of device yield was consistently observed. Based on the results, the EHD cleaning technique was found to be an effective addition to off-line abrasive cleaning that might have additional benefits to production
  • Keywords
    contact resistance; electrohydrodynamics; integrated circuit testing; integrated circuit yield; surface cleaning; surface contamination; abrasive cleaning; contact resistance; device yield; electrohydrodynamic cleaning; integrated circuit production; probe card; surface contamination; wafer-level testing; Abrasives; Cleaning; Contact resistance; Electrohydrodynamics; Performance evaluation; Probes; Surface contamination; Surface resistance; Testing; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference, 2000. Proceedings. International
  • Conference_Location
    Atlantic City, NJ
  • ISSN
    1089-3539
  • Print_ISBN
    0-7803-6546-1
  • Type

    conf

  • DOI
    10.1109/TEST.2000.894240
  • Filename
    894240