• DocumentCode
    2762687
  • Title

    High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements

  • Author

    Schüler, N. ; Mittelstrass, D. ; Dornich, K. ; Niklas, J.R.

  • Author_Institution
    Freiberg Instrum. GmbH, Freiberg, Germany
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Changes in the conduction type of a multicrystalline brick can occur, since a high phosphorus concentration is typical for the low quality feedstock that is usually used in PV industry. The inline detection of these changes is made possible via photoconductivity measurements. The measured photoconductivity depends strongly on the resistivity of the sample. With a developed computer algorithm the sharp raises of the photoconductivity at pn-changes can be detected in bricks. With these measurements it is possible to detect pn-changes with a one mm resolution as early as possible in the production process.
  • Keywords
    elemental semiconductors; p-n junctions; photoconductivity; photovoltaic cells; silicon; computer algorithm; contact less photoconductivity measurements; high resolution inline detection; multicrystalline silicon; p-n junction; photovoltaic industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615887
  • Filename
    5615887