DocumentCode
2762687
Title
High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements
Author
Schüler, N. ; Mittelstrass, D. ; Dornich, K. ; Niklas, J.R.
Author_Institution
Freiberg Instrum. GmbH, Freiberg, Germany
fYear
2010
fDate
20-25 June 2010
Abstract
Changes in the conduction type of a multicrystalline brick can occur, since a high phosphorus concentration is typical for the low quality feedstock that is usually used in PV industry. The inline detection of these changes is made possible via photoconductivity measurements. The measured photoconductivity depends strongly on the resistivity of the sample. With a developed computer algorithm the sharp raises of the photoconductivity at pn-changes can be detected in bricks. With these measurements it is possible to detect pn-changes with a one mm resolution as early as possible in the production process.
Keywords
elemental semiconductors; p-n junctions; photoconductivity; photovoltaic cells; silicon; computer algorithm; contact less photoconductivity measurements; high resolution inline detection; multicrystalline silicon; p-n junction; photovoltaic industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615887
Filename
5615887
Link To Document