DocumentCode
2762810
Title
Boron - nitrogen interactions in liquid silicon
Author
Dalaker, H. ; Tangstad, M.
Author_Institution
SINTEF Mater. & Chem., Trondheim, Norway
fYear
2010
fDate
20-25 June 2010
Abstract
The interactions of boron and nitrogen in liquid silicon have been investigated experimentally. The effect of these interactions on the solubility limit of nitrogen in liquid silicon has been examined, and the precipitation of BN-particles is also discussed. Silicon has been melted in Si3N4-crucibles and samples extracted using quartz tubes and a syringe. Prior to melting, 0.1 or 1.5 wt% boron were added to the silicon feedstock. The rapidly quenched samples have been analysed for nitrogen-content using Leco™, and Arrhenius-expressions describing the nitrogen content as functions of temperature were derived for the different boron levels. When comparing the obtained nitrogen contents with results previous results published by the current authors for the pure Si - N-system, it is clear that the presence of boron affects the solubility limit, with much lower levels of nitrogen being detected in the boron-doped samples.
Keywords
boron; elemental semiconductors; liquid semiconductors; nitrogen; precipitation (physical chemistry); quenching (thermal); silicon; solubility; Arrhenius-expressions; B; N2; Si; boron-nitrogen interactions; liquid silicon; precipitation; rapid quenching; solubility limit;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615892
Filename
5615892
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