• DocumentCode
    2762810
  • Title

    Boron - nitrogen interactions in liquid silicon

  • Author

    Dalaker, H. ; Tangstad, M.

  • Author_Institution
    SINTEF Mater. & Chem., Trondheim, Norway
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    The interactions of boron and nitrogen in liquid silicon have been investigated experimentally. The effect of these interactions on the solubility limit of nitrogen in liquid silicon has been examined, and the precipitation of BN-particles is also discussed. Silicon has been melted in Si3N4-crucibles and samples extracted using quartz tubes and a syringe. Prior to melting, 0.1 or 1.5 wt% boron were added to the silicon feedstock. The rapidly quenched samples have been analysed for nitrogen-content using Leco™, and Arrhenius-expressions describing the nitrogen content as functions of temperature were derived for the different boron levels. When comparing the obtained nitrogen contents with results previous results published by the current authors for the pure Si - N-system, it is clear that the presence of boron affects the solubility limit, with much lower levels of nitrogen being detected in the boron-doped samples.
  • Keywords
    boron; elemental semiconductors; liquid semiconductors; nitrogen; precipitation (physical chemistry); quenching (thermal); silicon; solubility; Arrhenius-expressions; B; N2; Si; boron-nitrogen interactions; liquid silicon; precipitation; rapid quenching; solubility limit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615892
  • Filename
    5615892