DocumentCode
2762822
Title
Laser doping technique using continuous wave laser in multi-crystalline silicon solar cell process
Author
Hasegawa, Mitsuhiro ; Hirata, Kenji ; Saitoh, Takashi ; Takayama, Tamaki ; Sugimura, Tomohiro Funatani Emi ; Tsujii, Shinichiro ; Tani, Ayumi ; Fuyuki, Takashi
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Ikoma, Japan
fYear
2010
fDate
20-25 June 2010
Abstract
In the fabrication of silicon solar cells process, laser doping (LD) technique is recently gathering many attentions because of its advantages such as be operated at room temperature and in the atmosphere. In this study, we tried to apply laser doping method for the emitter formation in multi-crystalline silicon solar cell. As the result, enough photovoltaic properties were achieved by illuminated I-V measurements. In addition, evaluation by EL imaging technique was verified that LD technique can be applied to fabricate multi-crystalline silicon solar cells.
Keywords
elemental semiconductors; laser materials processing; silicon; solar cells; I-V measurements; continuous wave laser; laser doping technique; multi-crystalline solar cell; photovoltaic properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5615893
Filename
5615893
Link To Document