DocumentCode
2763196
Title
Discontinuous Innovation: Strained Silicon Technology
Author
Patton, G.L.
Author_Institution
Syst. & Technol. Group, IBM, Hopewell Junction, NY
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
Strained silicon technology has had a dramatic impact on extending the limits of semiconductor technology. Due to the difficulties of both bipolar and CMOS scaling, strained layer technology offers a manufacturability approach to change the material properties of silicon and significantly enhance performance
Keywords
bipolar transistors; elemental semiconductors; field effect devices; semiconductor technology; silicon; CMOS scaling; Si; bipolar scaling; material properties; semiconductor technology; strained layer technology; strained silicon technology; BiCMOS integrated circuits; CMOS technology; Capacitive sensors; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Materials science and technology; Silicon germanium; Technological innovation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246569
Filename
1715938
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