• DocumentCode
    2763271
  • Title

    Energy band structure and absorption coefficients in the quantum-dot intermediate band solar cells

  • Author

    Hu, W.G. ; Inoue, T. ; Kojima, O. ; Kita, T.

  • Author_Institution
    CREATE, Kobe Univ., Kobe, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    This paper describes a net generation balance model to study the qasi-Fermi level split and the intermediate band (IB) filling. Our simulations reveal that the QD state density is not enough high to pin the IB quasi-Fermi level (EfIB) at the position of the IB level (EIB), and the filling factor (f) is determined by the absorption-recombination process of sub-bandgap photons. In the quasi-uniform absorption (equivalent absorption coefficients), a rough approximation is that EfIB parallel with EIB, and is clamped in the equilibrium position. In the nonuniform absorption case (inequivalent absorption coefficients), our simulations suggest that optimizing αIC0VI0 ratio can effectively enhance the conversion efficiency.
  • Keywords
    Fermi level; band structure; electron-hole recombination; light absorption; quantum dots; solar cells; absorption-recombination process; energy band structure; equivalent absorption coefficients; inequivalent absorption coefficient; intermediate band filling; qasiFermi level split; quantum dot intermediate band solar cells; quantum dot state density; quasi-uniform absorption; sub-bandgap photons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5615917
  • Filename
    5615917