DocumentCode
2763291
Title
p-n Junction Leakage Current in Strained-Si/SGOI Diodes
Author
Tanabe, A. ; Numata, T. ; Tezuka, Taro ; Hirashita, N. ; Takagi, Shinichi
Author_Institution
Assoc. of Super-Adv. Electron. Technol. (ASET), MIRAJ, Kawasaki
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In this paper, the origin of p-n junction leakage current in s-Si/SGOI diodes is investigated. It is found that generation current by bulk trap is dominant in the s-Si/SGOI p-n junction leakage current compared to diffusion current and generation current by oxide interface state and that the calculated leakage current is low enough even in Ge-on-insulator (GOI) channels at hp45 nm technology node
Keywords
elemental semiconductors; germanium; leakage currents; p-n junctions; semiconductor diodes; semiconductor-insulator boundaries; silicon; SGOI diodes; bulk trap; diffusion current; generation current; germanium-on-insulator; oxide interface state; p-n junction leakage current; Germanium silicon alloys; Interface states; Leakage current; MOSFETs; P-n junctions; Photonic band gap; Semiconductor diodes; Silicon germanium; Silicon on insulator technology; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246573
Filename
1715942
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