Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon

Author

Harris, James S. ; Yu-Hsuan Kuo ; Miller, David A. B.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We have demonstrated efficient QCSE in silicon-based structures, using strained Ge MQWs. The behavior of the exciton peaks, the band edge shift and the shift in absorption coefficient are comparable to those observed in III-V materials at similar wavelengths. Our materials and fabrication processes are completely CMOS compatible and suitable for mass production. This approach is therefore very promising for silicon-based electro-absorption modulators operating at high speed, low power, and low operating voltage and with small device areas

Keywords

Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; excitons; germanium; quantum confined Stark effect; semiconductor quantum wells; CMOS process; Ge-SiGe; absorption coefficient; band edge shift; exciton peaks; quantum confined Stark effect modulators; quantum well; silicon-based electro-absorption modulators; Absorption; CMOS process; Excitons; Fabrication; Germanium silicon alloys; III-V semiconductor materials; Potential well; Quantum well devices; Silicon germanium; Stark effect;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246579

Filename

1715948