DocumentCode
2763399
Title
Performance and Reliability of SiGe Photodetectors
Author
Morse, Matthew ; Dosunmu, F. ; Chetrit, Yoel ; Sarid, Gadi
Author_Institution
Mission Coll. Blvd, Santa Clara, CA
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
The raw performance of normal incidence Ge on Si detectors has been found to be close to that of GaAs devices in optical properties at 850nm. In addition the leakage current is nearing that needed for many applications. Further receiver data that quantifies this is presented at the talk
Keywords
Ge-Si alloys; elemental semiconductors; leakage currents; optical properties; photodetectors; semiconductor device reliability; 850 nm; SiGe; leakage current; optical properties; photodetectors; Application software; Educational institutions; Germanium silicon alloys; Implants; Infrared detectors; Optical computing; Optical receivers; Photodetectors; Semiconductor films; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246580
Filename
1715949
Link To Document