Title :
Performance and Reliability of SiGe Photodetectors
Author :
Morse, Matthew ; Dosunmu, F. ; Chetrit, Yoel ; Sarid, Gadi
Author_Institution :
Mission Coll. Blvd, Santa Clara, CA
Abstract :
The raw performance of normal incidence Ge on Si detectors has been found to be close to that of GaAs devices in optical properties at 850nm. In addition the leakage current is nearing that needed for many applications. Further receiver data that quantifies this is presented at the talk
Keywords :
Ge-Si alloys; elemental semiconductors; leakage currents; optical properties; photodetectors; semiconductor device reliability; 850 nm; SiGe; leakage current; optical properties; photodetectors; Application software; Educational institutions; Germanium silicon alloys; Implants; Infrared detectors; Optical computing; Optical receivers; Photodetectors; Semiconductor films; Silicon germanium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246580
