DocumentCode
2763445
Title
Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
Author
De Jaeger, B. ; Kaczer, Ben ; Zimmerman, Paul ; Opsomer, K. ; Winderickx, G. ; Van Steenbergen, J. ; Van Moorhem, E. ; Bonzom, R. ; Leys, F. ; Arena, Chantal ; Bauer, Matthias ; Werkhoven, C. ; Meuris, Marc ; Heyns, Marc
Author_Institution
IMEC, Leuven
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive
Keywords
MOSFET; elemental semiconductors; germanium; hole mobility; semiconductor device reliability; silicon; Ge; Si; drain regions; gate stack; hole mobility; mobility enhancement; nFET devices; pFET devices; source regions; Charge carrier processes; Electron mobility; FETs; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inductors; MOSFETs; Passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246581
Filename
1715950
Link To Document