• DocumentCode
    2763515
  • Title

    Ge/Si (100) heterojunction photodiodes grown by low-energy plasma-enhanced CVD

  • Author

    Isella, Giovanni ; Osmond, Johann ; Kummer, Matthias ; Kaufmann, Rolf ; Von Känel, Hans

  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Here we present results on heterojunction p-i-n photodiodes grown by Low-Energy Plasma-Enhanced CVD (LEPECVD). In a LEPECVD reactor the relatively thick Ge layers, required in NIR detectors, can be deposited in a few minutes at temperatures fully compatible with the CMOS process, making such deposition method appealing for this application.
  • Keywords
    Annealing; Dark current; Diodes; Heterojunctions; Inductors; Infrared detectors; Optical buffering; PIN photodiodes; Plasma applications; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246584
  • Filename
    1715953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763515