DocumentCode
2763563
Title
Scalable nonlinear resistor model for GaAs MMIC
Author
Zhu, Yu ; Wei, Cejun ; Klimashov, Oleksiy ; Zhang, Cindy ; Tkachenko, Yevgeniy
Author_Institution
Skyworks Solution Inc., Woburn
fYear
2006
fDate
12-15 Dec. 2006
Firstpage
1539
Lastpage
1542
Abstract
A scalable nonlinear resistor model is proposed, which is suitable for epitaxial layer resistor on GaAs substrate commonly used in GaAs MMIC. Analytical expressions describing the geometry dependences of the model parameters are provided. The proposed scalable model, implemented into a circuit simulator, accurately predicts the DC, S parameter, and power performance of the resistors with various geometries. Approaches for improving resistor linearity are also described based on the proposed model.
Keywords
III-V semiconductors; MMIC; epitaxial layers; gallium arsenide; resistors; MMIC; circuit simulator; scalable nonlinear resistor model; Circuits; Epitaxial layers; Gallium arsenide; Geometry; MMICs; Predictive models; Resistors; Semiconductor process modeling; Solid modeling; Substrates; Circuit simulation; DC measurement; GaAs MMIC; modeling; nonlinearities; resistors; scalability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-4-902339-08-6
Electronic_ISBN
978-4-902339-11-6
Type
conf
DOI
10.1109/APMC.2006.4429699
Filename
4429699
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