Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization

Author

Shi, Y. ; Yan, Bin ; Pu, Liangzhou ; Zhang, K.J. ; Zhu, J.M. ; Ma, G.B. ; Han, P. ; Zhang, Rongting ; Zheng, You Dou

Author_Institution

Key Lab. of Photonic & Electron. Mater., Nanjing Univ.

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

Self-assembled Ge quantum dots have attracted a great deal of interests for the realization of silicon- based quantum electronic and optoelectronic devices, such as mid-infrared quantum dot photodetectors, laser, resonant tunnelling diodes, etc. Here, we report on the fabrication of the high density Ge-dots/Si multilayered structure films combining LPCVD and Ni-based MILC processing. The present work is a promising fabrication method to obtain high quality Ge-dots/Si multilayered structure films

Keywords

chemical vapour deposition; crystallisation; elemental semiconductors; germanium; multilayers; semiconductor quantum dots; silicon; Ge quantum dots; Ge-Si; Ge-dots/Si multilayered structure; LPCVD; Ni-based MILC processing; Ni-induced lateral crystallization; low-pressure CVD; multilayered structure film; optoelectronic devices; silicon-based quantum electronic devices; Buffer layers; Crystallization; Diffraction; Doping; Fabrication; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor films; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246591

Filename

1715960