• DocumentCode
    2763851
  • Title

    Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics

  • Author

    Tzu-Juei Wang ; Hung-Wei Chen ; Chih-Hsin Ko ; John Yeh ; Ping-Chun Yeh ; Shoou-Jinn Chang ; San-Lein Wu ; Wen-Chin Lee ; Tang, D.D.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we investigate the characteristics of collector current (IC) and breakdown voltage (BVCEO) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaIc and DeltaBVCEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI c and DeltaBVCEO at the same stress condition
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; stress effects; HBT characteristics; SiGe; breakdown voltage; collector current; four-point bending apparatus; mechanical uniaxial stress; BiCMOS integrated circuits; CMOS technology; Compressive stress; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Photonic band gap; Silicon germanium; Stress control; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246602
  • Filename
    1715971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2763851