Title :
Challenges for accurate reliability projections in the ultra-thin oxide regime
Author :
Wu, Ernest Y. ; Abadeer, W.W. ; Han, Liang-Kai ; Lo, Shin-Hsien ; Hueckel, Gary R.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Essex Junction, VT, USA
Abstract :
In this work, we discuss several important aspects of reliability projections, especially for ultra-thin oxides in a direct tunneling regime such as stress methodologies, the determination of projection parameters, and their dependence on stress conditions as well as their impact on reliability projection. Most importantly, we found that the Weibull shape factors and area dependence are key to understanding of the reliability limitations for ultra-thin oxides
Keywords :
Weibull distribution; dielectric thin films; integrated circuit design; integrated circuit reliability; integrated circuit testing; tunnelling; SiO2-Si; Weibull shape factors; area dependence; direct tunneling regime; projection parameters; reliability; reliability limitations; reliability projection; stress conditions; stress methodologies; ultra-thin oxide regime; ultra-thin oxides; CMOS technology; Capacitors; Electric breakdown; Quantum capacitance; Quantum mechanics; Research and development; Shape; Stress; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761593
