Challenges for accurate reliability projections in the ultra-thin oxide regime

Author

Wu, Ernest Y. ; Abadeer, W.W. ; Han, Liang-Kai ; Lo, Shin-Hsien ; Hueckel, Gary R.

Author_Institution

IBM Semicond. Res. & Dev. Center, Essex Junction, VT, USA

fYear

1999

fDate

1999

Firstpage

57

Lastpage

65

Abstract

In this work, we discuss several important aspects of reliability projections, especially for ultra-thin oxides in a direct tunneling regime such as stress methodologies, the determination of projection parameters, and their dependence on stress conditions as well as their impact on reliability projection. Most importantly, we found that the Weibull shape factors and area dependence are key to understanding of the reliability limitations for ultra-thin oxides

Keywords

Weibull distribution; dielectric thin films; integrated circuit design; integrated circuit reliability; integrated circuit testing; tunnelling; SiO₂-Si; Weibull shape factors; area dependence; direct tunneling regime; projection parameters; reliability; reliability limitations; reliability projection; stress conditions; stress methodologies; ultra-thin oxide regime; ultra-thin oxides; CMOS technology; Capacitors; Electric breakdown; Quantum capacitance; Quantum mechanics; Research and development; Shape; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761593

Filename

761593