Title :
Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si
Author :
Sugawara, Kenji ; Sakuraba, Masao ; Murota, Junichi
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
Abstract :
In this work, using a Ge film as a buffer layer, highly strained Si epitaxial growth on Ge/Si(100) has been investigated. Epitaxial growth of strained Si films on 84 %-relaxed Ge/Si(100) is achieved using ECR plasma CVD without substrate heating. Especially for the thickness of 1.7 nm, strain amount in the strained Si reaches as high as 4 % and it is thermally stable even at 500degC
Keywords :
Ge-Si alloys; cyclotron resonance; epitaxial growth; plasma CVD; semiconductor epitaxial layers; ECR plasma CVD; SiGe; buffer layer; electron cyclotron resonance; highly strained silicon film; silicon epitaxial growth; Argon; Atomic layer deposition; Capacitive sensors; Electromagnetic heating; Epitaxial growth; Plasma density; Plasma temperature; Raman scattering; Rough surfaces; Substrates;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246488
