DocumentCode
2764101
Title
Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si
Author
Sugawara, Kenji ; Sakuraba, Masao ; Murota, Junichi
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In this work, using a Ge film as a buffer layer, highly strained Si epitaxial growth on Ge/Si(100) has been investigated. Epitaxial growth of strained Si films on 84 %-relaxed Ge/Si(100) is achieved using ECR plasma CVD without substrate heating. Especially for the thickness of 1.7 nm, strain amount in the strained Si reaches as high as 4 % and it is thermally stable even at 500degC
Keywords
Ge-Si alloys; cyclotron resonance; epitaxial growth; plasma CVD; semiconductor epitaxial layers; ECR plasma CVD; SiGe; buffer layer; electron cyclotron resonance; highly strained silicon film; silicon epitaxial growth; Argon; Atomic layer deposition; Capacitive sensors; Electromagnetic heating; Epitaxial growth; Plasma density; Plasma temperature; Raman scattering; Rough surfaces; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246488
Filename
1715982
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