Doppler frequency converter using a semiconductor plasma boundary moving at a relativistic speed

Efficient and wide band frequency conversion using a finline with a silicon substrate has been discussed. Laser pulses move along the finline as generating an electron-hole plasma at the surface of silicon in the fins. The plasma acts as a rf-short moving at a relativistic speed, reflecting an incident wave and up-shifting its frequency through the double Doppler effect. The theoretical results have shown that a high frequency conversion ratio of 7.5 could be achieved with a power conversion efficiency of more than 50 % at W-band.