DocumentCode :
2764123
Title :
Epitaxial Growth of P Atomic Layer Doped Si Film by Alternate Surface Reaction of PH3and Si2H6on Strained Si1-xGex/Si
Author :
Chiba, Ryosuke ; Sakuraba, Masao ; Masao, J.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
fYear :
2006
fDate :
15-17 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
In this work, in order to improve the abruptness, P atomic layer formation and P atomic layer doping in Si epitaxial growth using Si2H6 by ultraclean low pressure CVD (LPCVD) and its electrical characteristics were investigated
Keywords :
Ge-Si alloys; chemical vapour deposition; epitaxial growth; semiconductor doping; LPCVD; Si:P; Si2H6; SiGe-Si; alternate surface reaction; atomic layer doping; electrical characteristics; epitaxial growth; ultraclean low pressure CVD; Atomic layer deposition; Atomic measurements; Doping profiles; Epitaxial growth; Hydrogen; Inductors; Optical films; Semiconductor films; Substrates; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
Type :
conf
DOI :
10.1109/ISTDM.2006.246489
Filename :
1715983
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2764123
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