Title :
Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers
Author :
Trinkaus, H. ; Buca, Dan ; Hollander, B. ; Mantl, Siegfried ; Khan, Ab Rouf ; Bauer, G.
Author_Institution :
Inst. fur Festkorperforschung, Forschungzentrum Jiilich GmbH, Julich
Abstract :
We discuss the role of the discrete nature of misfit dislocations in XRD. For this, we consider a large number of different arrays of 60deg misfit dislocations relevant for SiGe/Si hetero-systems and introduce the concept of caustics of increasing order (Trinkaus and Naturf, 1973 and Trinkaus and Drepper, 1977) to determine the XRD peak positions for these arrays
Keywords :
Ge-Si alloys; X-ray diffraction; dislocation arrays; substrates; SiGe-Si; SiGe-Si hetero-systems; X-ray diffraction theory; XRD peak positions; discrete nature; misfit dislocations; partially relaxed layers; Capacitive sensors; Germanium silicon alloys; Information technology; Lattices; Physics; Silicon germanium; Strain measurement; Thermal stresses; X-ray diffraction; X-ray scattering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246494
