Title :
Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature
Author :
Peng, Y.H. ; Li, H.R. ; Chen, Patrick S. ; Suen, Y.W. ; Kuan, C.H. ; Lee, S.C.
Author_Institution :
Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
Abstract :
The comparison between the Si and Si0.8Ge0.2 capping layers shows that the conduction band offset of Si0.8Ge0.2 and Si can form a barrier for electrons, and that it can increase the quantity of carriers on conduction band. From the results of these experiments, the characteristics of carrier blockers formed by hetero structure can be applied in IV-IV optoelectronics devices to achieve higher optical power
Keywords :
Ge-Si alloys; IV-VI semiconductors; conduction bands; light emitting diodes; semiconductor superlattices; silicon; IV-IV optoelectronics devices; Si capped layer; Si-Si0.8Ge0.2; carrier blocker characteristics; carrier quantity; conduction band; electron barrier; optical power; superlattice LED characteristics; Germanium silicon alloys; Laser sintering; Light emitting diodes; Luminescence; Ohmic contacts; PIN photodiodes; Silicon germanium; Stimulated emission; Superlattices; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246497
