• DocumentCode
    2764265
  • Title

    Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature

  • Author

    Peng, Y.H. ; Li, H.R. ; Chen, Patrick S. ; Suen, Y.W. ; Kuan, C.H. ; Lee, S.C.

  • Author_Institution
    Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The comparison between the Si and Si0.8Ge0.2 capping layers shows that the conduction band offset of Si0.8Ge0.2 and Si can form a barrier for electrons, and that it can increase the quantity of carriers on conduction band. From the results of these experiments, the characteristics of carrier blockers formed by hetero structure can be applied in IV-IV optoelectronics devices to achieve higher optical power
  • Keywords
    Ge-Si alloys; IV-VI semiconductors; conduction bands; light emitting diodes; semiconductor superlattices; silicon; IV-IV optoelectronics devices; Si capped layer; Si-Si0.8Ge0.2; carrier blocker characteristics; carrier quantity; conduction band; electron barrier; optical power; superlattice LED characteristics; Germanium silicon alloys; Laser sintering; Light emitting diodes; Luminescence; Ohmic contacts; PIN photodiodes; Silicon germanium; Stimulated emission; Superlattices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246497
  • Filename
    1715991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764265