Title :
Compact Modeling of Flicker Noise in HEMTs
Author :
Dasgupta, Avirup ; Khandelwal, Sourabh ; Chauhan, Yogesh Singh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.
Keywords :
carrier mobility; flicker noise; high electron mobility transistors; semiconductor device models; semiconductor device noise; HEMT devices; TCAD simulations; carrier number fluctuation; flicker noise; high electron mobility transistors; low frequency noise; mobility fluctuation; physical mechanisms; physics-based compact model for; 1f noise; Gallium nitride; HEMTs; Integrated circuit modeling; Noise; HEMT; flicker noise; noise model;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2014.2347991
