DocumentCode
2764302
Title
A Study of Low Energy Phosphorus Implantation and Annealing in Si:C Epitaxial Films
Author
Zhiyuan Ye ; Yihwan Kim ; Zojaji, A. ; Sanchez, E. ; Yonah Cho ; Castle, M. ; Foad, M.A.
Author_Institution
Appl. Mater., Sunnyvale, CA
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant loss of substitution carbon and a change of carbon depth profile. It is also observed that very abrupt junction can be formed in a Si:C epitaxial film
Keywords
annealing; ion implantation; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 1050 C; SiC; SiC epitaxial film; carbon depth profile; high crystalline; low energy phosphorus annealing; low energy phosphorus implantation; phosphorus implantation; substitution carbon concentration; thermal annealing; Annealing; Compressive stress; Lattices; MOS devices; Semiconductor films; Semiconductor materials; Silicon; Temperature; Tensile stress; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246499
Filename
1715993
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