Title :
The relationship between resistance changes and void volume changes in passivated aluminum interconnects
Author :
Doan, Jonathan C. ; Bravman, John C. ; Flinn, Paul A. ; Marieb, Thomas N.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
We performed electromigration tests on 11 passivated Al lines at 212°C and 3 MA/cm2 inside a high voltage scanning electron microscope (HVSEM). Our automated experimental apparatus saved an image of the entire test structure every six minutes while it continuously measured and recorded the resistance of each line. We determined the void volume as a function of time using digital image processing. While it is straightforward to determine resistance changes knowing the changes in the void geometry, it remains to be seen whether one can perform the reverse calculation. From our data, the amount of information that can be extracted solely from the resistance versus time curves appears limited. The nucleation time of the first void can usually be found, but it is not possible to detect the nucleation of subsequent voids. The resistance change depends much more critically on void shape than void size, making an estimation of the void volume from the resistance impossible
Keywords :
aluminium; electric resistance; electromigration; image processing; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; nucleation; passivation; scanning electron microscopy; voids (solid); 212 C; Al; HVSEM; automated experimental apparatus; digital image processing; electromigration tests; high voltage scanning electron microscope; line resistance measurement; passivated Al lines; passivated aluminum interconnects; resistance changes; resistance versus time curves; test structure image; void geometry; void nucleation time; void shape; void size; void volume; void volume changes; void volume estimation; Automatic testing; Data mining; Digital images; Electrical resistance measurement; Electromigration; Geometry; Performance evaluation; Scanning electron microscopy; Shape; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761614