Title :
Low-Temperature Pre-Treatments in Vertical Epitaxial Reactor With Improved Vacuum Load-Lock Chamber
Author :
Wang, Jiacheng ; Inokuchi, Y. ; Kunii, Y.
Author_Institution :
Hitachi Kokusai Electr. Inc., Toyama
Abstract :
In the following, several low-temperature in-situ pre-treatments are studied using batch-type vertical epitaxial reactor with improved vacuum load-lock chamber. Interfacial residual oxygen after in-situ pre-treatments is measured by secondary ion mass spectrometry (SIMS). We found that interfacial oxygen can be reduced and high quality epitaxial growth is possible by low-temperature treatment with chlorine (Cl)-based-gas
Keywords :
chemical reactors; chlorine; epitaxial growth; low-temperature techniques; oxygen; secondary ion mass spectroscopy; chlorine based gas; epitaxial growth; interfacial residual oxygen; low temperature pretreatments; secondary ion mass spectrometry; vacuum load lock chamber; vertical epitaxial reactor; Atomic layer deposition; Epitaxial growth; Fluid flow; Germanium silicon alloys; Hydrogen; Inductors; Moisture; Pollution measurement; Silicon germanium; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246501
