DocumentCode
2764346
Title
Low-Temperature Pre-Treatments in Vertical Epitaxial Reactor With Improved Vacuum Load-Lock Chamber
Author
Wang, Jiacheng ; Inokuchi, Y. ; Kunii, Y.
Author_Institution
Hitachi Kokusai Electr. Inc., Toyama
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In the following, several low-temperature in-situ pre-treatments are studied using batch-type vertical epitaxial reactor with improved vacuum load-lock chamber. Interfacial residual oxygen after in-situ pre-treatments is measured by secondary ion mass spectrometry (SIMS). We found that interfacial oxygen can be reduced and high quality epitaxial growth is possible by low-temperature treatment with chlorine (Cl)-based-gas
Keywords
chemical reactors; chlorine; epitaxial growth; low-temperature techniques; oxygen; secondary ion mass spectroscopy; chlorine based gas; epitaxial growth; interfacial residual oxygen; low temperature pretreatments; secondary ion mass spectrometry; vacuum load lock chamber; vertical epitaxial reactor; Atomic layer deposition; Epitaxial growth; Fluid flow; Germanium silicon alloys; Hydrogen; Inductors; Moisture; Pollution measurement; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246501
Filename
1715995
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