DocumentCode
2764410
Title
Integration of Selective SiGe Epitaxy for Source/Drain Application in MOSFETs
Author
Radamson, H.H. ; Hallstedt, J. ; Ostling, Mikael
Author_Institution
Sch. of Inf. & Commun. Technol., Kungliga Tekniska Hogskolan, Kista
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
In this paper the selective epitaxy of B- and P-doped SiGe layers on either HCl-etched or un-processed Si surfaces for S/D application in CMOS structures have been investigated. The study has focused on how to obtain high quality layers and tackle subjects e.g. dopant incorporation and defect generation in these layers
Keywords
Ge-Si alloys; MOSFET; boron; epitaxial growth; etching; phosphorus; semiconductor doping; CMOS structures; MOSFET; SiGe:B; SiGe:P; defect generation; dopant incorporation; selective epitaxy; source/drain application; unprocessed Si surfaces; Atomic measurements; Boron; Doping; Epitaxial growth; Germanium silicon alloys; Hydrogen; MOSFETs; Silicon germanium; Substrates; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246504
Filename
1715998
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