Hot carrier degradation of the low frequency noise of MOS transistors under analog operating conditions

Author

Brederlow, Ralf ; Weber, Werner ; Schmitt-Landsiedel, Doris ; Thewes, Roland

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1999

fDate

1999

Firstpage

239

Lastpage

242

Abstract

The hot carrier degradation of the 1/f noise behaviour of n- and p-MOS transistors under typical analog CMOS operating conditions is investigated. Contrary to previous results, it is shown that the noise magnitude in saturation mode in short channel devices significantly increases after hot carrier degradation. In low noise circuits, this increase can become a major reliability issue. In this paper, the mechanisms responsible for this degradation effect and the resulting analog circuit design considerations are discussed

Keywords

1/f noise; CMOS analogue integrated circuits; MOSFET; hot carriers; integrated circuit design; integrated circuit noise; integrated circuit reliability; semiconductor device noise; 1/f noise; MOS transistors; analog CMOS operating conditions; analog circuit design considerations; analog operating conditions; degradation mechanisms; hot carrier degradation; low frequency noise; low noise circuits; n-MOS transistors; noise magnitude; p-MOS transistors; reliability; saturation mode; short channel devices; CMOS analog integrated circuits; Circuit noise; Degradation; Hot carriers; Low-frequency noise; MOSFETs; Noise figure; Noise measurement; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761619

Filename

761619