Title :
A unified compact scalable ΔId model for hot carrier reliability simulation
Author :
Chen, Ping ; Wu, Lifeng ; Zhang, Gang ; Liu, Zhihong
Author_Institution :
BTA Technol. Inc., Santa Clara, CA, USA
Abstract :
A new compact drain current difference (ΔId) model for hot carrier induced circuit reliability simulation is presented in this paper. For the first time, a single equation unifies the subthreshold, linear and saturation regions with high accuracy in both forward and reverse operation modes. It applies to both interface state generation and electron trapping dominant device degradation mechanisms. The model also shows good scalability
Keywords :
circuit reliability; circuit simulation; electric current; electron traps; hot carriers; integrated circuit modelling; integrated circuit reliability; interface states; electron trapping dominant device degradation mechanisms; forward operation mode; hot carrier induced circuit reliability simulation; interface state generation; interface state generation dominant device degradation mechanisms; linear region; model scalability; reverse operation mode; saturation region; subthreshold region; unified compact scalable drain current difference model; Aging; Circuit simulation; Degradation; Electrons; Equations; Hot carriers; Interface states; SPICE; Scalability; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761620
