Systematic Study of Thick Strained Silicon NMOSFETs for Digital Applications

Author

Fiorenza, J.G. ; Kohli, P. ; Kang, S.J. ; Erdtmann, M. ; Curtin, M. ; Bengston, S. ; Matthews, K. ; Nguyen, B. ; Kim, I.K. ; Yuk, H.S. ; Lee, D.K. ; Lee, B.Y. ; Lochtefeld, A. ; Wise, R.

Author_Institution

AmberWave Syst. Corp., Salem, NH

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

2

Abstract

This work investigates NMOSFETs on thick biaxially strained silicon for digital logic applications. Strain and long channel mobility enhancement are shown to be maintained for strained films as thick as 300 nm, 15 times thicker than the equilibrium critical thickness, and misfit-dislocation induced off-current leakage is shown to be completely eliminated for t_Si equiv 100 nm. Significant performance enhancement is achieved: short channel DC NMOS drive current is up to 18% higher than comparable unstrained silicon devices and thin strained silicon devices

Keywords

MOSFET; elemental semiconductors; leakage currents; logic circuits; silicon; digital applications; equilibrium critical thickness; long channel mobility enhancement; misfit-dislocation induced off-current leakage; thick strained silicon NMOSFET; thin strained silicon devices; unstrained silicon devices; Capacitive sensors; Fabrication; Germanium silicon alloys; Implants; Instruments; MOSFETs; Semiconductor films; Silicon devices; Silicon germanium; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246509

Filename

1716003