Simulations of Non-Uniform, Non-Linear Collector Doping Profiles for SiGe HBTs

Author

Preisler, E. ; Cai, Wenlong ; Jie Zheng ; Racanelli, M.

Author_Institution

Jazz Semicond., Newport Beach, CA

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

Through 1D device simulations it has been shown that there is some advantage to engineering the shape of the collector profile in SiGe HBT´s but only in certain regimes. Power law profiles are shown to be superior to a flat profile only for low breakdown cases. For high-breakdown devices there is little or no advantage to shaping the profile. For the low breakdown case, profiles with their dose distributed more on the subcollector side and less on the base side are superior although it is difficult to keep adding dose ad infinitum to these types of profiles so some balance must be struck between the total dose necessary and the shape of profile used

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; 1D device simulations; HBT; SiGe; collector doping profile; high-breakdown devices; power law profiles; Bipolar transistors; Doping profiles; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Radio frequency; Semiconductor process modeling; Shape; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246512

Filename

1716006