Title :
High Mobility Nano-Scaled CMOS: Some Opportunities and Challenges
Author :
Ernst, Thomas ; Andrieu, F. ; Weber, Olivier ; Duprt, C. ; Faynot, O. ; Ducroquet, F. ; Clavelier, L. ; Hartmann, J.M. ; Barraud, S. ; Ghibaudo, Gerard ; Deleonibus, Simon
Author_Institution :
CEA/DRT-LETI, Grenoble
Abstract :
The scaling of some today´s high mobility MOSFETs solutions was discussed. The enhancement (between 10-25% for sub-40nm devices) is often lower than the natural mobility decrease due to high short-channel doping (for bulk) or border S/D effects (on SOI). Further understanding of the short channel scattering effects is necessary to engineer next generation high mobility channels
Keywords :
MOSFET; nanoelectronics; semiconductor doping; silicon-on-insulator; MOSFET; border S/D effects; high mobility nanoscaled CMOS; high short-channel doping; short channel scattering effects; silicon-on-insulator; Capacitive sensors; Charge carrier processes; Compressive stress; Electrons; Germanium silicon alloys; Hafnium oxide; MOSFET circuits; Scalability; Silicon germanium; Tin;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246513
