• DocumentCode
    2764611
  • Title

    High Mobility Nano-Scaled CMOS: Some Opportunities and Challenges

  • Author

    Ernst, Thomas ; Andrieu, F. ; Weber, Olivier ; Duprt, C. ; Faynot, O. ; Ducroquet, F. ; Clavelier, L. ; Hartmann, J.M. ; Barraud, S. ; Ghibaudo, Gerard ; Deleonibus, Simon

  • Author_Institution
    CEA/DRT-LETI, Grenoble
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The scaling of some today´s high mobility MOSFETs solutions was discussed. The enhancement (between 10-25% for sub-40nm devices) is often lower than the natural mobility decrease due to high short-channel doping (for bulk) or border S/D effects (on SOI). Further understanding of the short channel scattering effects is necessary to engineer next generation high mobility channels
  • Keywords
    MOSFET; nanoelectronics; semiconductor doping; silicon-on-insulator; MOSFET; border S/D effects; high mobility nanoscaled CMOS; high short-channel doping; short channel scattering effects; silicon-on-insulator; Capacitive sensors; Charge carrier processes; Compressive stress; Electrons; Germanium silicon alloys; Hafnium oxide; MOSFET circuits; Scalability; Silicon germanium; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246513
  • Filename
    1716007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764611